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hanbit h m f 16 m8f 8vs url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 1 general description the h m f 16 m 8f8vs is a high - speed flash read only memory (from) module containing 16 , 777 , 216 byte s organized in an x 8 bit configuration. the module consists of eight 2m x 8 from mounted on a 80 - pin, smm connector fr4 - printed circ uit board. commands are written to the command register using standard microprocessor write timings. register contents serve as input to an internal state - machine, which controls the erase and programming circuitry. write cycles also internally latch addre sses and data needed for the programming and erase operations. reading data out of the device is similar to reading from 12.0v flash or eprom devices. output enable (/oe) and write enable (/we) can set the memory input and output. the host system can detec t a program or erase operation is complete by observing the ready pin, or reading the dq7(data # polling) and dq6(toggle) status bits. when from module is disable condition the module is becoming power standby mode, system designer can get low - power desig n. all module components may be powered from a single + 3 v dc power supply and all inputs and outputs are lv ttl - compatible. features w part identification h m f 16 m 8f8vs (bot tom boot block configuration) w access time: 90, 100, 120ns w high - density 16mbyte design w high - reliability, low - power design w single + 3v to 3.6 v power supply w 8 0 - pin designed 40 - pin, 0.8mm fine pitch connector p1,p2 w minimum 100,000 write cycle guarantee per sector w 10 - year data retention at 85 o c w flexible sector architecture w embedded algorithms w erase suspend / erase resume options marking w timing 90 n s access - 90 100ns access - 100 120 n s access - 120 w packages smm 80 - pin f p1 p2 pin symbol pin symbol pin symbol pin symbol 1 vcc 21 vcc 1 vcc 21 vcc 2 a20 22 nc 2 /ce1 22 nc 3 nc 23 dq7 3 /ce2 23 nc 4 nc 24 nc 4 /ce3 24 nc 5 nc 25 dq6 5 /ce4 25 /oe 6 /ry_by 26 nc 6 /ce5 26 /ce0 7 vss 27 vss 7 vss 27 vss 8 /reset 28 dq5 8 /ce6 28 a16 9 /we 29 nc 9 /ce7 29 a0 10 a19 30 dq4 10 nc 30 a18 11 a8 31 nc 11 nc 31 a17 12 a9 32 dq3 12 nc 32 a7 13 a10 33 nc 13 nc 33 a6 14 vss 34 vss 14 vss 34 vss 15 a11 35 dq2 15 nc 35 a5 16 a12 36 nc 16 nc 36 a4 17 a13 37 dq1 17 nc 37 a3 18 a14 38 nc 18 nc 38 a2 19 a15 39 dq0 19 nc 39 a1 20 vcc 40 vcc 20 vcc 40 vcc flash - rom module 16mbyte ( 16 m x 8 - bit) , smm 80pin part no. hmf 16 m 8f8vs p in assignment
hanbit h m f 16 m8f 8vs url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 2 functional block dia gram pin description pin function pin function a0 C a20 address inputs /byte word / byte selection dq0 C dq7 data input/output vcc power (+3v) /ce0 - /ce7 chip enable vss ground /oe output enable /ry_by ready/busy output /we read/write enable nc no connection /reset hardware reset pin /ce4 a(0 : 20) dq(0 :7) /oe /we /ry - by u 4 a(0:20 dq(0:7) /ce /reset /oe /we /ry - by u3 a(0:20 dq(0:7) /ce /reset /oe /we /ry - by u 2 a(0:20) dq(0:7 ) /ce /reset /ce0 /ce1 /ce2 /ce3 /ry_by /rese t /we /oe /ce5 /ce6 /ce7 /oe /we /ry - by u 1 a(0:20) dq(0:7 ) /ce /reset /oe /we /ry - by u 8 a(0:20) dq(0:7 ) /ce /reset /oe /we /ry - by u 7 a(0:20) dq(0:7 ) /ce / reset /oe /we /ry - by u 6 a(0:20) dq(0:7 ) /ce /reset /oe /we /ry - by u 5 a(0:20) dq(0:7 ) /ce /reset
hanbit h m f 16 m8f 8vs url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 3 t ruth t able mode /c s /oe /we reset dq standby vcc 0.3v x x vcc 0.3v high - z reset x x x l high - z sector protect l h l v id d in, d out sector unprotect l h l v id d in, d out read l l h h d out write l h l h d out note : x means don't care , we0* low byte (d0~7) write enable, we1* high byte(d8~15 ) write enable. absolute maximum rat ings parameter rating voltage on any pin relative to vss - 0. 5 v to vcc +0 .5 v voltage on vcc supply relative to vss - 0.5v to + 4 .0v output short circuit current 1,600ma storage temperature - 65 o c to +150 o c operating te mperature - 0 o c to +70 o c w stresses greater than those listed under " absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. recommended operatin g conditions parameter range vcc for regulated supply volt age +2.0v to 3.6 v vcc for full voltage +2.7v to 3.6 v dc and operating cha racteristics parameter test conditions symbol min max units input l eakage current v in = v ss to v cc , v cc = v cc max i l1 - 8. 0 +8. 0 m a output leakage current v out = v ss to v cc , v cc = v cc max i l0 - 8. 0 +8. 0 m a output high voltage i oh = - 2. 0 ma, vcc = vcc min v oh 0.85xvcc v output low voltage i ol = 4.0ma, vcc = vcc min v ol 0.4 v vcc active read current /ce = v il , , /oe=v i l , f=5mhz i cc1 128 ma vcc active write current /ce = v il , /oe =v ih i cc2 240 ma vcc standby current /ce , reset =v cc 0.3v i cc3 40 m a vcc reset current /reset= v ss 0.3v , i cc4 40 m a
hanbit h m f 16 m8f 8vs url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 4 low vcc lock - out voltage v lko 1.5 v erase and programmin g performance limits parameter min. typ. m ax. unit comments block erase time - 0.7 15 sec excludes 00h programming prior to erasure byte programming time - 9 270 m s excludes system - level overhead chip programming time - 18 54 sec excludes system - level overhead capacitance parameter symbol parameter descrip tion test setup min. max unit c in input capacitance v in = 0 10 pf c out output capacitance v out = 0 10 pf c in2 control pin capacitance v in = 0 10 pf notes : test conditions t a = 25 o c, f=1.0 mhz. ac character istics u read only operations characteristics parameter symbols cl= 100pf - 90 - 100 - 120 jedec standard description min max min max min max unit t avav t rc read cycle time 90 100 120 ns t elqv t ce chip enable to output dela y 90 100 120 ns t glqv t oe chip enable to output delay 35 40 50 ns t ehqz t df chip enable to output high - z 30 30 30 ns t axqx t qh output hold time from addresses, /ce or /oe, whichever occurs first 0 0 0 ns
hanbit h m f 16 m8f 8vs url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 5 test conditions test condition 75 all others unit output load 1ttl gate output load capacitance, c l (including jig capacitance) 30 100 pf input rise and full times 5 20 ns input pulse levels 0.0 - 3.0 0.45 - 2.4 v input timing measurement reference levels 1.5 0.8, 2.0 v output timi ng measurement reference levels 1.5 0.8, 2.0 v u erase/program operations parameter symbols c l =100 pf - 90 - 100 - 120 jedec standard description min max min max min max unit t avav t wc write cycle time 90 10 0 120 ns t avwl t as address setup time 0 0 0 ns t wlax t ah address hold time 45 45 50 ns t dvwh t ds data setup time 45 45 50 ns t whdx t dh data hold time 0 0 0 ns t oes output enable setup time 0 0 0 ns t ghwl t ghwl read recover time before write 0 0 0 ns t elwl t cs /ce setup time 0 0 0 ns t wheh t ch /ce hold time 0 0 0 ns 3. 3 v device under test 2.7k w diode s = in3064 or equivalent 6.2k w in3064 or equivalent c l note : c l = 100pf including jig capacitance
hanbit h m f 16 m8f 8vs url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 6 t wlwh t wp write pulse width 45 45 50 ns t whwl t wph write pulse width high 30 30 30 ns t whwh1 t whwh1 byte programming operation 9 9 9 m s t whwh2 t bers block erase operation 0.7 0.7 0.7 sec t vcs vcc setup time 50 50 50 m s t rb recovery time from ry/by 0 0 0 ns t busy program/erase valid to ry/by delay 90 90 90 ns u alternate /ce controlled erase/program operations c l =100pf parameter symbols - 90 - 100 - 120 jedec standard des cription min max min max min max unit t avav t wc write cycle time 90 100 120 ns t avel t as address setup time 0 0 0 ns t elax t ah address hold time 45 45 50 ns t dveh t ds data setup time 45 45 50 n s t ehdx t dh data hold time 0 0 0 ns t oes output enable setup time 0 0 0 ns t ghel t ghel read recover time before write 0 0 0 ns t wlel t ws /oe high to /we low 0 0 0 ns t ehwh t wh /we hold time 0 0 0 ns t eleh t cp /ce pulse width 45 45 5 0 ns t ehel t cph /ce pulse width high 30 30 30 ns t busy program/erase valid ry//by delay 90 90 90 n s t rb recovery time from ry//by 0 0 0 n s
hanbit h m f 16 m8f 8vs url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 7 timing diagrams notes : 1. dq7 is the output of the complement of the data writ ten to the device. 2. dout is the output of the data written to the device. 3. pa : program address, pd : program data 4. the illustration shows the last two cycles of the program command sequence.
hanbit h m f 16 m8f 8vs url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 8 notes : 1. dq7 is the output of the complement of th e data written to the device. 2. dout is the output of the data written to the device. 3. pa : program address, pd : program data 4. the illustration shows the last two cycles of the program command sequence.
hanbit h m f 16 m8f 8vs url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 9
hanbit h m f 16 m8f 8vs url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 10 package dimensions unit: mm front - side rear - side
hanbit h m f 16 m8f 8vs url: www.hbe.co.kr h anbit electronic s co., ltd. rev.02(august,2002) 11 o r dering information part number density org. package component number vcc speed hmf16m8f8vs - 90 16mbyte x 8 80pin - smm 8ea 3.3v 90ns hmf16m8f8vs - 100 16mbyte x 8 80pin - smm 8ea 3.3v 100ns hmf16m8f8vs - 120 16mbyte x 8 80pin - smm 8ea 3.3v 120ns

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